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| BUZ 342 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv/dt rated * Ultra low on-resistance * 175C operating temperature Pin 1 G Type BUZ 342 Pin 2 D Pin 3 S VDS 50 V ID 60 A RDS(on) 0.01 Package TO-218 AA Ordering Code C67078-S3135-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 150 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 460 dv/dt mJ ID = 60 A, VDD = 25 V, RGS = 25 L = 128 H, Tj = 25 C Reverse diode dv/dt kV/s IS = 0 A, VDS = 0 V, diF/dt = 0 A/s Tjmax = 0 C Gate source voltage Power dissipation VGS Ptot 20 400 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 0.37 75 E 55 / 175 / 56 C K/W Semiconductor Group 1 07/96 BUZ 342 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.007 4 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA A nA 0.01 VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 60 A Semiconductor Group 2 07/96 BUZ 342 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 30 55 4450 1450 650 - S pF 6000 2200 1000 ns 85 130 VDS 2 * ID * RDS(on)max, ID = 60 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 220 330 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 285 380 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 155 210 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 342 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.1 85 200 60 240 V 1.6 ns nC Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 120 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 342 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 65 A 450 W 55 Ptot 350 300 ID 50 45 40 250 200 150 100 50 0 0 35 30 25 20 15 10 5 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 A /ID = ) on S( D R V D S t = 47.0s p 100 s K/W ID 10 2 ZthJC 10 -1 1 ms 10 ms D = 0.50 0.20 10 1 10 DC -2 0.10 0.05 single pulse 0.02 0.01 10 0 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 342 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 140 A 120 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.032 a b c d Ptot =l 400W kj i h g f VGS [V] a b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS (on) 0.024 ID 110 100 90 80 70 60 50 40 c e c d e f g 0.020 0.016 dh i j k l 0.012 e f g 0.008 0.004 VGS [V] = a 4.5 4.0 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 30 20 b i j h 10 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 0 20 40 60 80 100 A 130 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 60 A 50 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 60 S 50 ID 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 gfs 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A 60 ID Semiconductor Group 6 07/96 BUZ 342 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 60 A, VGS = 10 V 0.028 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.024 98% RDS (on) 0.022 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 -60 VGS(th) 3.6 3.2 2.8 2.4 typ 98% 2.0 2% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 180 -20 20 60 100 C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 C Ciss pF A IF 10 2 10 3 Coss Crss 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 10 0 0.0 5 10 15 20 25 30 V 40 VDS 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 342 Avalanche energy EAS = (Tj ) parameter: ID = 60 A, VDD = 25 V RGS = 25 , L = 128 H 500 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 90 A 16 V EAS 400 350 300 250 200 150 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 100 50 0 20 2 0 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 160 nC 200 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/96 BUZ 342 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96 |
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